2007 10 Taiwan’s invention patent on “A New technology to fabricate the Self-align Trench Power MOSFETs” acquired (Invention license No. I 287840)
2005 10 The U.S.A invention patent on“Lower the on-resistance in protection circuit of rechargeable battery by using flip-chip technology” acquired (Invention license No.6,917,117)
2005 10 Mainland China invention patent on “The fabrication method for Power MOSFETs ” acquired (Invention license No.ZL01144661.7)
2005 5 Taiwan’s new type patent on “ An improved wire package method to reduce the On-Resistance of Power MOSFET ” acquired (New type license No. M262837)
2005 4 Mainland China invention patent on “Wireless bonded semi-conductor device and method for packaging the same” acquired (Invention license No.ZL02102821.4)
2004 12 Mainland China invention patent on “Lead-Frame ” acquired (Invention license No.ZL01110591.7)
2004 5 Taiwan’s invention patent on “Using the Guard Ring structure to integrate POWER MOSFET and system in one chip” acquired (Invention license No. 196136)
2004 5 Mainland China invention patent on “The design of POWER MOSFET by using Flip chip in protect circuit for battery ” acquired (Invention license No.ZL01110591.7)
2004 4 Taiwan’s invention patent on “For high avalanche energy power device design and fabrication ” acquired (Invention license No. 194175)
2003 12 Taiwan’s invention patent on “ A novel way to improve the switching performance by change the poly gate structure” acquired (Invention license No. 182953)
2003 9 Taiwan’s invention patent on “Wireless bonded semi-conductor device and method for packaging the same” acquired (Invention license No. 176589)
2003 7 Taiwan’s invention patent on “Integrated packaging structure for single-phased descending DC converter ” acquired (New type license No. 199864)
2003
5
Taiwan’s invention patent on “Lower the on-resistance in protection circuit of rechargeable battery by using flip-chip technology” acquired (Invention license No. 168017)
2003
4
Taiwan’s invention patent on “Package and appliance for semiconductor power device ” acquired
(Invention license No. 163944)
2003
3
Taiwan’s invention patent on “Wireless bonded semi-conductor device and method for packaging the same” acquired
(Invention license No. 165175)
2002
9
Taiwan’s invention patent on “Appliance and fabrication for using gradual doping on well areas to reduce electric leakage of Power MOSFET and increase Break-down voltage” acquired
(Invention license No. 154006)
2002
9
Taiwan’s invention patent on “Appliance and fabrication for Trench-typed Power MOSFET with reducing the electric resistance of the epitaxy layer” Acquired
(Invention license No. 152521)
2002
8
Taiwan’s invention patent on “Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manufacturing the same” acquired
(Invention license No. 151542)
2002
7
Taiwan’s invention patent on “Method of control switching speed of insulated gate bipolar transistor (IGBT) device, its structure and method of fabrication” acquired
(Invention license No. 151899)
2002
6
Taiwan’s invention patent on “Appliance and fabrication for low Rdson Power MOSFET” acquired
(Invention license No. 151091)
2002
6
Taiwan’s invention patent on “Appliance and fabrication for Trench-typed low Rdson Power MOSFET with planar technology in the same component space” acquired
(Invention license No. 151089)
2002
6
Taiwan’s invention patent on “Appliance and fabrication for planar Power MOSFET with super low Rdson” acquired
(Invention license No. 151088)
2002
5
Taiwan’s new type patent on “Power MOSFET appliance with low contact Rdson”
(New type license No. 185499)
2002
4
Taiwan’s invention patent on “Appliance and fabrication of decreasing Rdson and increasing avalanche current for Power MOSFET” acquired
(Invention license No. 147333)
2002
3
Taiwan’s invention patent on “Method and appliance of enhancing Power MOSFET’s switching speed by dose implantation” acquired
(Invention license No. 145832)
2002
3
Taiwan’s invention patent on “Development of construction and fabrication for Trenched Power MOSFET” acquired
(Invention license No. 144201)
2001
4
Taiwan’s new type patent on “Leadframe Design for Power MOSFET in plastic package” acquired
(New type license No. 153576)

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